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Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well

机译:GaAs / AlGaAs量子阱中自旋弛豫的温度和电子密度依赖性

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摘要

Temperature and carrier density-dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetries have been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much longer for the symmetrically designed GaAs QW comparing with the asymmetrical one, indicating the strong influence of Rashba spin-orbit coupling on spin relaxation. D'yakonov-Perel' mechanism has been revealed to be the dominant contribution for spin relaxation in GaAs/AlGaAs QWs. The spin relaxation time exhibits non-monotonic-dependent behavior on both temperature and photo-excited carrier density, revealing the important role of non-monotonic temperature and density dependence of electron-electron Coulomb scattering. Our experimental observations demonstrate good agreement with recently developed spin relaxation theory based on microscopic kinetic spin Bloch equation approach.
机译:利用时间分辨克尔旋转技术研究了具有不同结构对称性的GaAs / AlGaAs量子阱(QW)的温度和载流子密度相关的自旋动力学。对称设计的GaAs QW的自旋弛豫时间要比不对称的要长得多,这表明Rashba自旋轨道耦合对自旋弛豫有很强的影响。已经发现D'yakonov-Perel'机制是GaAs / AlGaAs量子阱中自旋弛豫的主要贡献。自旋弛豫时间在温度和光激发载流子密度上均表现出非单调依赖性,这揭示了非单调温度和电子-电子库仑散射的密度依赖性的重要作用。我们的实验观察结果表明,与基于微观动力学自旋Bloch方程方法的最新开发的自旋弛豫理论具有很好的一致性。

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